Abstract We demonstrate direct evidence that the lattice distortion, induced by boron carbide (B x C y ) stoichiometry, assists the growth of boron carbide nanowires. The transformation between different polytypic boron carbide phases lowers the energy barrier for boron diffusion, promoting boron migration in the nanowire growth. An atomistic mass transport model has been established to explain such volume-diffusion-induced nanowire growth which cannot be explained by the conventional surface diffusion model alone. These findings significantly advance our understanding of nanowire growth processes and mass transport mechanisms and provide new guidelines for the design of nanowire-structured devices.

中文翻译：

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揭示碳化硼纳米线的多型转变辅助生长机制

摘要 我们证明了碳化硼 (B x C y ) 化学计量引起的晶格畸变有助于碳化硼纳米线的生长的直接证据。不同多型碳化硼相之间的转变降低了硼扩散的能垒，促进了纳米线生长中的硼迁移。已经建立了原子质量传输模型来解释这种体积扩散诱导的纳米线生长，这不能单独由传统的表面扩散模型来解释。这些发现极大地促进了我们对纳米线生长过程和质量传输机制的理解，并为纳米线结构器件的设计提供了新的指导。