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Growth of epitaxially stabilized, non-cubic Gd 2 O 3 on silicon(1 1 1) substrates
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2017-12-01 , DOI: 10.1016/j.jcrysgro.2017.10.019
M. Moellers , C. Margenfeld , T.F. Wietler , H.J. Osten

Abstract We report on the growth of non-cubic gadolinium oxide on a silicon substrate using molecular beam epitaxy. Structural investigations with X-ray diffraction show that the structure of the oxide differs from the expected cubic structure. Possible structures of gadolinium oxide besides the only stable cubic structure include a monoclinic and a hexagonal phase. Both phases are very similar, which increases the difficulty to distinguish between the two structures. Gracing incidence X-ray diffraction results of the grown layer indicate a monoclinic structure while in contradiction to that a phi-scan shows a sixfold symmetry. We explain these results by a monoclinic structure with six rotational domains.

中文翻译:

在硅 (1 1 1) 衬底上外延稳定的非立方 Gd 2 O 3 的生长

摘要 我们报告了使用分子束外延在硅衬底上生长非立方氧化钆。X 射线衍射结构研究表明,氧化物的结构与预期的立方结构不同。除了唯一稳定的立方结构之外,氧化钆的可能结构包括单斜相和六方相。两个阶段非常相似,这增加了区分两种结构的难度。生长层的渐进入射 X 射线衍射结果表明单斜结构,而与 phi 扫描显示六重对称性相反。我们通过具有六个旋转域的单斜结构来解释这些结果。
更新日期:2017-12-01
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