Abstract We have demonstrated that in situ annealing effect has to be taken into account in order to realize the 1.31 μm InAs quantum dot (QD) lasers with the dot-in-well (DWELL) structure. The photoluminescence (PL) properties have been investigated for the InAs DWELL samples annealed at different temperatures in situ , simulating the annealing process during the growth of the top cladding AlGaAs layer in the laser structure. The QDs with large size in the DWELL structure are vulnerable to the annealing process at temperatures above 550 °C, revealed by the drastic change in the PL spectra. However, the DWELL structure is stable during the annealing process at 540 °C for three hours. The thermal stability of the QDs in the DWELL structure has to be considered in the growth of QD lasers for long wavelength operation.

中文翻译：

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MBE 生长的 InAs 点在阱结构的退火效果

摘要 我们已经证明，为了实现具有点阱 (DWELL) 结构的 1.31 μm InAs 量子点 (QD) 激光器，必须考虑原位退火效应。已经研究了在不同温度下原位退火的 InAs DWELL 样品的光致发光 (PL) 特性，模拟激光器结构中顶部包层 AlGaAs 层生长期间的退火过程。DWELL 结构中具有大尺寸的 QD 在 550 °C 以上的温度下容易受到退火过程的影响，PL 光谱的剧烈变化表明了这一点。然而，DWELL 结构在 540°C 下三个小时的退火过程中是稳定的。在用于长波长操作的 QD 激光器的生长中必须考虑 DWELL 结构中 QD 的热稳定性。