Fe₂O₃ films were deposited on transparent conductive substrates (fluorine doped tin oxide (FTO) on glass) by aerosol pyrolysis. The intrinsic nature of as-deposited films requires the addition of a suitable metal dopant. Sn proved to be well adapted to this task, as it increased photocurrents in junctions with an aqueous electrolyte by one order of magnitude as compared to undoped films. The maximum IPCE value (incident photon to current conversion efficiency) was 0.21 at 400 nm for a 120 nm thick film and a maximum photocurrent of 1630 μA/cm² at 0.65 V vs. Ag/AgCl under simulated solar irradiation.

中文翻译：

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气溶胶热解法制备掺锡半导体Fe ₂ O ₃（赤铁矿）层

通过气溶胶热解法将Fe ₂ O ₃薄膜沉积在透明导电基板（玻璃上的氟掺杂氧化锡（FTO））上。沉积膜的固有性质要求添加合适的金属掺杂剂。事实证明，Sn很好地适应了这一任务，因为与未掺杂的薄膜相比，它使与水电解质的接合处的光电流增加了一个数量级。对于120 nm厚的膜，最大IPCE值（入射光子到电流转换效率）在400 nm下为0.21，在模拟太阳辐射下，相对于Ag / AgCl在0.65 V下的最大光电流为1630μA/ cm ²。