Ferroelectric‐Like Charge Trapping Thin‐Film Transistors and Their Evaluation as Memories and Synaptic Devices,Advanced Electronic Materials

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Ferroelectric‐Like Charge Trapping Thin‐Film Transistors and Their Evaluation as Memories and Synaptic Devices
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-10-12 , DOI: 10.1002/aelm.201700309
Alwin Daus ₁ , Pawel Lenarczyk ₂ , Luisa Petti ₁ , Niko Münzenrieder _{1,

3} , Stefan Knobelspies ₁ , Giuseppe Cantarella ₁ , Christian Vogt ₁ , Giovanni A. Salvatore ₁ , Mathieu Luisier ₂ , Gerhard Tröster ₁

Affiliation

This work presents a defect charging mechanism in 5‐nm‐thick amorphous Al₂O₃ thin‐films fabricated on plastic, which leads to multistate memory effects, and thus the realization of synaptic thin‐film transistors (TFTs) for neuromorphic applications. First, the Al₂O₃ thin‐films are characterized in metal–insulator–metal stacks. These devices exhibit ferroelectric‐like behavior, which is visible in the small‐signal capacitance and the surface charge density. Furthermore, the quantum‐mechanical simulation of the current–voltage characteristic leads to a physical model with trap charges close to the anode interface where deep‐level traps are identified by fitting the experimentally obtained resonant tunneling peaks. The trap charge lifetime and frequency behavior is evaluated in InGaZnO₄ TFTs, where the 5‐nm‐thick Al₂O₃ layer is employed as gate dielectric. At an operating voltage as low as ±2 V, a charge trapping retention up to ≈3 h and a discernable ON/OFF read‐out with a factor >3 at 2 kHz are achieved. When subjected to a train of gate–source voltage pulses, the TFTs show charge integration properties which emulate facilitating and depressing behaviors of biological synapses. These results indicate that thin low‐temperature defect‐rich metal‐oxide dielectrics may be candidates for low‐voltage memory applications and neuromorphic circuits on unconventional substrates.

中文翻译：

铁电电荷陷阱薄膜晶体管及其作为存储器和突触设备的评估

这项工作提出了一种在塑料上制造的厚度为5 nm的非晶Al ₂ O ₃薄膜中的缺陷充电机制，这导致了多态记忆效应，从而实现了神经形态应用中的突触薄膜晶体管（TFT）的实现。首先，Al ₂ O ₃薄膜的特征是金属-绝缘体-金属叠层。这些器件表现出类似铁电的行为，这在小信号电容和表面电荷密度中可见。此外，电流-电压特性的量子力学模拟导致了一个物理模型，其陷阱电荷靠近阳极界面，通过拟合实验获得的共振隧穿峰可识别深能级陷阱。在InGaZnO ₄ TFT中评估了陷阱电荷的寿命和频率行为，其中5 nm厚的Al ₂ O ₃层用作栅极电介质。在低至±2 V的工作电压下，电荷陷阱保持时间可达≈3h，并且在2 kHz时可分辨的ON / OFF读数> 3。当受到一系列栅极-源极电压脉冲的影响时，TFT会显示出电荷积分特性，可模拟生物突触的促进和抑制行为。这些结果表明，薄的低温，富含缺陷的金属氧化物电介质可能是低压存储应用和非常规衬底上的神经形态电路的候选者。

更新日期：2017-10-12

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