Abstract Crystallization by hydride vapor phase epitaxy method of gallium nitride single crystals doped with germanium and properties of the obtained material are described in this paper. Growth was performed in hydrogen and nitrogen carrier gas. The results were studied and compared. Influence of different flows of germanium tetrachloride, precursor of germanium, on the grown crystals was investigated. Ammonothermal GaN substrates were used as seeds for crystallization. Structural, electrical, and optical properties of HVPE-GaN doped with germanium are presented and discussed in detail. They were compared to properties of HVPE-GaN doped with silicon and also grown on native seeds of high quality.

中文翻译：

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掺杂锗的 HVPE-GaN 的晶体生长

摘要 本文介绍了锗掺杂氮化镓单晶的氢化物气相外延法结晶及所得材料的性质。在氢气和氮气载气中进行生长。结果进行了研究和比较。研究了不同流量的四氯化锗（锗的前体）对生长晶体的影响。氨热 GaN 衬底用作结晶的种子。详细介绍和讨论了掺锗的 HVPE-GaN 的结构、电学和光学特性。将它们与掺杂硅的 HVPE-GaN 的特性进行了比较，并且它们也在高质量的天然种子上生长。