Abstract Isothermal oxidation behavior of NbSi 2 coating grown on Nb substrate was investigated in air at 1000–1450 °C. Oxidation rate of NbSi 2 coating increased with temperature at 1000–1300 °C but opposite trend was observed at 1300–1450 °C. Maximum oxidation rate was obtained at 1300 °C due to the highest porosity of oxide scale. Lowest oxidation rate was observed at 1450 °C due to formation of dense oxide scale by combined effect of volatilization of Nb oxide phase, viscous flow and densification of c-SiO 2 . Oxidation resistance of NbSi 2 coating at these temperatures was governed by some inter-related factors.

中文翻译：

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NbSi 2 涂层在 1000–1450 °C 下的高温等温氧化行为

摘要 研究了 Nb 基体上生长的 NbSi 2 涂层在空气中 1000-1450 °C 的等温氧化行为。NbSi 2 涂层的氧化速率在 1000-1300 °C 时随温度升高而增加，但在 1300-1450 °C 时观察到相反的趋势。由于氧化皮的孔隙率最高，因此在 1300 °C 时获得了最大氧化速率。由于 Nb 氧化物相的挥发、粘性流动和 c-SiO 2 致密化的综合作用形成致密的氧化皮，因此在 1450 °C 观察到最低氧化速率。NbSi 2 涂层在这些温度下的抗氧化性受一些相互关联的因素控制。