Abstract We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. At optimum growth conditions, GaN nanocolumns are vertically aligned and well separated with an average diameter, height and density of 72 nm, 1.2 μm and 1.6 × 109 cm−2, respectively. The nanocolumns exhibit wurtzite crystal structure with no threading dislocations, stacking faults or twinning and grow in the [0 0 0 1] direction. At the interface adjacent to the glass, there is a few atom layers thick intermediate phase with ABC stacking order (zinc blende). Photoluminescence measurements evidence intense and narrow excitonic emissions, along with the absence of any defect-related zinc blende and yellow luminescence emission.

中文翻译：

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等离子辅助分子束外延生长在石英玻璃上自组装 GaN 纳米柱的研究

摘要 我们展示了通过等离子体辅助分子束外延在熔融石英玻璃上生长 GaN 纳米柱。研究了衬底温度、Ga 通量和 N2 流量对结构和光学性能的影响。在最佳生长条件下，GaN 纳米柱垂直排列且分离良好，平均直径、高度和密度分别为 72 nm、1.2 μm 和 1.6 × 109 cm-2。纳米柱表现出纤锌矿晶体结构，没有穿透位错、堆垛层错或孪晶，并在 [0 0 0 1] 方向上生长。在与玻璃相邻的界面处，有几个原子层厚的中间相，具有 ABC 堆积顺序（闪锌矿）。光致发光测量证明了强而窄的激子发射，