Abstract Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg 1 - x Cd x Te are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E 1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg 1 - x Cd x Te layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications.

中文翻译：

---

基于应变半金属 HgCdTe 层的拓扑隔离器的 MBE 生长

摘要 介绍了用于生长基于半金属 Hg 1 - x Cd x Te 的拓扑绝缘体 (TI) 的分子束外延 (MBE) 技术的特殊性。研究了在 GaAs 衬底上生长的一系列应变层，其成分接近 3D Dirac 点。层的组成通过可见光区域中光学反射率的E 1 最大值的位置来验证。通过原子力和电子显微镜确定表面形态。磁传输测量显示量化霍尔电阻曲线和 Shubnikov de Hass 振荡（高达 50 K）。