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Sulfonated Mesoporous Silica as Proton Exchanging Layer in Solid‐State Organic Transistor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-10-05 , DOI: 10.1002/aelm.201700316
Soniya D. Yambem 1, 2 , Jana Timm 3 , Morten Weiss 3 , Ajay K. Pandey 2, 4 , Roland Marschall 3
Affiliation  

Electronic devices that can interface with biological systems are highly desirable for developing smart bionics and prosthetics. However, this is challenging since most electronic devices used in our daily life send signals through flow of electrons while biological signals are carried via the exchange of ions and protons. Here, an all‐solid‐state, low‐voltage proton‐sensing electronic device using sulfonated mesoporous silica nanoparticles as gate materials in an organic thin film transistor (OTFT) is presented. The OTFT gated with solution processable SO3H‐Si‐MCM‐41 nanoparticle film maintains transistor output characteristics for operating source–drain voltages 0 > Vds > −2.0 V. This proton‐sensing OTFT shows strong modulation in the drain current, ≈12‐fold increase, when the top of the SO3H‐Si‐MCM‐41 layer is brought in contact with H2O2, demonstrating that such OTFT operation is highly applicable in advanced biomedical sensing platforms. The effect of gate electrode thickness and quantity of analyte on achievable modulation is also presented. The sensitivity and stability of the proton sensitive OTFTs over five decades of concentration of analyte is discussed.

中文翻译:

磺化介孔二氧化硅作为固态有机晶体管中的质子交换层

可以与生物系统相接的电子设备对于开发智能仿生和假肢是非常需要的。然而,这具有挑战性,因为我们日常生活中使用的大多数电子设备都通过电子流发送信号,而生物信号则通过离子和质子的交换来传递。本文介绍了一种全固态,低压质子传感电子设备,该设备使用磺化中孔二氧化硅纳米粒子作为有机薄膜晶体管(OTFT)中的栅极材料。OTFT带有可溶液处理的SO 3 H-Si-MCM-41纳米颗粒薄膜,可保持晶体管输出特性,适用于工作源极-漏极电压0> V ds> -2.0V。当SO 3 H-Si-MCM-41层的顶部与H 2 O 2接触时,这种质子敏感的OTFT在漏极电流中表现出强烈的调制,≈12倍的增加,表明这种OTFT操作非常适用于先进的生物医学传感平台。还介绍了栅电极厚度和分析物数量对可实现的调制的影响。讨论了质子敏感性OTFT在分析物浓度达到五十年后的灵敏度和稳定性。
更新日期:2017-10-05
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