Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses,Advanced Electronic Materials

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Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-10-05 , DOI: 10.1002/aelm.201700263
Chen Wang ₁ , Huaqiang Wu ₁ , Bin Gao ₁ , Wei Wu ₁ , Lingjun Dai ₁ , Xinyi Li ₁ , He Qian ₁

Affiliation

Ultrafast switching is an attractive performance for resistive random access memory (RRAM) as one of the next‐generation nonvolatile memory options. A high‐speed measurement setup is designed and constructed to characterize the RESET operation of HfO_x‐based RRAM device with sub‐nanosecond pulse. The analysis of the RESET process is quantitatively performed by studying the relationship between resistance and pulse conditions. Experimental data show that stable resistive switching can be achieved by sub‐nanosecond pulse on HfO_x‐based RRAM. A compact model is built based on high‐speed RESET measurement results, and it is found that the oxygen ions migration driven by the electric field is the dominant factor during the sub‐nanosecond pulse RESET process rather than thermal effect. It demonstrates HfO_x‐based RRAM has great potential on extremely high‐speed memory applications.

中文翻译：

亚纳秒级脉冲对基于HfOx的RRAM进行超快速RESET分析

超快切换是电阻式随机存取存储器（RRAM）的诱人性能，它是下一代非易失性存储器选件之一。设计并构建了一个高速测量设置，以表征具有亚纳秒脉冲的基于HfO _x的RRAM器件的RESET操作。通过研究电阻和脉冲条件之间的关系，可以定量执行RESET过程的分析。实验数据表明，HfO _x上的亚纳秒脉冲可以实现稳定的电阻切换基于RRAM。根据高速RESET测量结果建立了一个紧凑模型，发现在亚纳秒脉冲RESET过程中，电场驱动的氧离子迁移是主要因素，而不是热效应。它证明了基于HfO _x的RRAM在超高速存储器应用中具有巨大的潜力。

更新日期：2017-10-05

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