Exploring the Stability of Novel Wide Bandgap Perovskites by a Robot Based High Throughput Approach,Advanced Energy Materials

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Exploring the Stability of Novel Wide Bandgap Perovskites by a Robot Based High Throughput Approach
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2017-10-04 , DOI: 10.1002/aenm.201701543
Shi Chen ₁ , Yi Hou ₁ , Haiwei Chen ₁ , Xiaofeng Tang _{1,

2} , Stefan Langner ₁ , Ning Li ₁ , Tobias Stubhan _{1,

3} , Ievgen Levchuk ₁ , Ening Gu _{1,

2} , Andres Osvet ₁ , Christoph J. Brabec _{1,

3}

Affiliation

Currently, lead‐based perovskites with mixed multiple cations and hybrid halides are attracting intense research interests due to their promising stability and high efficiency. A tremendous amount of 3D and 2D perovskite compositions and configurations are causing a strong demand for high throughput synthesis and characterization. Furthermore, wide bandgap (≈1.75 eV) perovskites as promising top‐cell materials for perovskite–silicon tandem configurations require the screening of different compositions to overcome photoinduced halide segregation and still yielding a high open‐circuit voltage (V_oc). Herein, a home‐made high throughput robot setup is introduced performing automatic perovskite synthesis and characterization. Subsequently, four kinds of compositions (i.e., cation mixtures of Cs–methylammonium (MA), Cs– formamidinium (FA), MA–FA, and FA–MA) with an optical bandgap of ≈1.75 eV are identified as promising device candidates. For Cs–MA and Cs–FA films it is found that the Br–I phase segregation indeed can be overcome. Moreover, Cs–MA, MA–FA, and Cs–FA based devices exhibit an average V_oc of 1.17, 1.17, 1.12 V, and their maximum values approached 1.18, 1.19, 1.14 V, respectively, which are among the highest V_oc (≈1.2 V) values for ≈40% Br perovskite. These findings highlight that the high throughput approach can effectively and efficiently accelerate the invention of novel perovskites for advanced applications.

中文翻译：

基于机器人的高通量方法探索新型宽带隙钙钛矿的稳定性

目前，具有多种稳定阳离子和混合卤化物的铅基钙钛矿因其有希望的稳定性和高效率而引起了广泛的研究兴趣。大量的3D和2D钙钛矿成分和构造引起对高通量合成和表征的强烈需求。此外，宽带隙（≈1.75eV）钙钛矿作为有希望的钙钛矿-硅串联配置的顶层电池材料，需要筛选不同的成分以克服光致卤化物的偏析，并仍然产生高的开路电压（V _oc）。在此，介绍了一种自动完成钙钛矿合成和表征的自制高通量机器人装置。随后，具有约1.75 eV的光学带隙的四种成分（即Cs-甲基铵（MA），Cs-甲ami（FA），MA-FA和FA-MA的阳离子混合物）被确定为有前途的器件候选。对于Cs-MA和Cs-FA薄膜，发现确实可以克服Br-I相偏析。此外，基于Cs–MA，MA–FA和Cs–FA的器件的平均V _oc为1.17、1.17、1.12 V，其最大值分别接近1.18、1.19、1.14 V，属于最高的V _oc。钙钛矿含量约40％的（≈1.2V）值。这些发现表明，高通量方法可以有效地促进新型钙钛矿用于高级应用的发明。

更新日期：2017-10-04

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