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Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐k Interlayer Dielectrics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-09-21 , DOI: 10.1002/aelm.201700116 Bradley J. Nordell 1 , Thuong D. Nguyen 1 , Anthony N. Caruso 1 , Sudhaunshu S. Purohit 2 , Nathan A. Oyler 2 , William A. Lanford 3 , David W. Gidley 4 , John T. Gaskins 5 , Patrick E. Hopkins 5 , Patrick Henry 6 , Sean W. King 6 , Michelle M. Paquette 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-09-21 , DOI: 10.1002/aelm.201700116 Bradley J. Nordell 1 , Thuong D. Nguyen 1 , Anthony N. Caruso 1 , Sudhaunshu S. Purohit 2 , Nathan A. Oyler 2 , William A. Lanford 3 , David W. Gidley 4 , John T. Gaskins 5 , Patrick E. Hopkins 5 , Patrick Henry 6 , Sean W. King 6 , Michelle M. Paquette 1
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A longstanding challenge in ultralarge‐scale integration has been the continued improvement in low‐dielectric‐constant (low‐k) interlayer dielectric materials and other specialized layers in back‐end‐of‐the‐line interconnect fabrication. Modeled after the success of carbon‐containing organosilicate materials, carbon‐enriched amorphous hydrogenated boron carbide (a‐BxC:Hy) films are grown by plasma‐enhanced chemical vapor deposition from ortho‐carborane and methane. These films contain more extraicosahedral sp3 hydrocarbon groups than nonenriched a‐BxC:Hy films, as revealed by FTIR and NMR spectroscopy, and also exhibit lower dielectric constants than their nonenriched counterparts, notably due to low densities combined with a low distortion and orientation contribution to the total polarizability. Films with dielectric constant as low as 2.5 are reported with excellent electrical stability (leakage current of 10−9 A cm−2 at 2 MV cm−1 and breakdown voltage of >6 MV cm−1), good thermal conductivity of 0.31 ± 0.03 W m−1 K−1, and high projected Young's modulus of 12 ± 3 GPa. These properties rival those of leading SiOC:H materials, and position a‐BxC:Hy as an important complement to traditional Si‐based materials to meet the complex needs of next‐generation interconnect fabrication.
中文翻译：
极低介电层间电介质的富碳非晶氢化硼碳化物膜
在超大的规模集成一个长期存在的挑战是在低介电常数（低持续改善ķ）层间介电材料和在后端的最线互连制造其他专门的层。以含碳有机硅酸盐材料成功为蓝本，通过等离子增强的化学气相沉积法从原碳烷和甲烷中生长出碳富集的非晶氢化碳化硼（a-B x C：H y）薄膜。这些薄膜比未富集的a‐B x C：H y包含更多的二十面外sp 3烃基如FTIR和NMR光谱所揭示的，该膜还显示出比其未富集的膜更低的介电常数，这主要是由于低密度以及对总极化率的低畸变和取向贡献。据报道，介电常数低至2.5的薄膜具有出色的电稳定性（在2 MV cm -1下的漏电流为10 -9 A cm -2，击穿电压> 6 MV cm -1），良好的导热系数为0.31±0.03 W m -1 K -1，高投影杨氏模量为12±3 GPa。这些特性可与领先的SiOC：H材料媲美，并且位置a‐B x C：H y 作为传统硅基材料的重要补充，可以满足下一代互连制造的复杂需求。
更新日期：2017-09-21
中文翻译：
极低介电层间电介质的富碳非晶氢化硼碳化物膜
在超大的规模集成一个长期存在的挑战是在低介电常数（低持续改善ķ）层间介电材料和在后端的最线互连制造其他专门的层。以含碳有机硅酸盐材料成功为蓝本，通过等离子增强的化学气相沉积法从原碳烷和甲烷中生长出碳富集的非晶氢化碳化硼（a-B x C：H y）薄膜。这些薄膜比未富集的a‐B x C：H y包含更多的二十面外sp 3烃基如FTIR和NMR光谱所揭示的，该膜还显示出比其未富集的膜更低的介电常数，这主要是由于低密度以及对总极化率的低畸变和取向贡献。据报道，介电常数低至2.5的薄膜具有出色的电稳定性（在2 MV cm -1下的漏电流为10 -9 A cm -2，击穿电压> 6 MV cm -1），良好的导热系数为0.31±0.03 W m -1 K -1，高投影杨氏模量为12±3 GPa。这些特性可与领先的SiOC：H材料媲美，并且位置a‐B x C：H y 作为传统硅基材料的重要补充，可以满足下一代互连制造的复杂需求。
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