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Chalcogen‐Atom‐Annulated Perylene Diimide Trimers for Highly Efficient Nonfullerene Polymer Solar Cells
Macromolecular Rapid Communications ( IF 4.2 ) Pub Date : 2017-09-15 , DOI: 10.1002/marc.201700405 Yuwei Duan 1 , Xiaopeng Xu 1 , Ying Li 1 , Zuojia Li 1 , Qiang Peng 1
Macromolecular Rapid Communications ( IF 4.2 ) Pub Date : 2017-09-15 , DOI: 10.1002/marc.201700405 Yuwei Duan 1 , Xiaopeng Xu 1 , Ying Li 1 , Zuojia Li 1 , Qiang Peng 1
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This communication reports the synthesis of two novel chalcogen‐atom‐annulated perylene diimide (PDI) trimers with twisted structures, TriPDI‐S and TriPDI‐Se, for efficient nonfullerene polymer solar cells. TriPDI‐Se exhibits more compact molecular arrangement due to the stronger intermolecular interactions induced by the selenium atom. This selenium annulation endows TriPDI‐Se with improved absorption and crystallinity in its blend film. The resulting devices exhibit enhanced Jsc of 17.15 mA cm−2 and fill factor (FF) of 66.8%, which are much higher than those of TriPDI‐S devices (Jsc = 16.71 mA cm−2; FF = 63.6%). Although TriPDI‐Se exhibits lower‐lying energy levels, TriPDI‐Se devices still obtain a higher Voc of 0.77 V compared to TriPDI‐S devices (Voc = 0.74 V), which is mainly originated from the reduced recombination in the related devices. Finally, the power conversion efficiency is significantly elevated from 7.86% for TriPDI‐S devices to 8.82% for TriPDI‐Se devices.
中文翻译：
用于高效非富勒烯聚合物太阳能电池的硫族元素原子Ann二酰亚胺三聚体
该交流报道了两种新型的具有扭曲结构的硫属元素原子环化的per二酰亚胺（PDI）三聚体TriPDI-S和TriPDI-Se的合成，用于高效的非富勒烯聚合物太阳能电池。由于硒原子引起的较强的分子间相互作用，TriPDI-Se的分子排列更为紧凑。硒环化技术使TriPDI-Se在其共混膜中具有更好的吸收性和结晶性。所得器件的J sc增强了17.15 mA cm -2，填充因子（FF）达到66.8％，远远高于TriPDI-S器件的J sc（J sc = 16.71 mA cm -2； FF = 63.6％）。尽管TriPDI-Se的能级较低，但TriPDI-Se器件仍能获得较高的能级与TriPDI-S器件相比，V oc为0.77 V（V oc = 0.74 V），这主要是由于相关器件中重组的减少所致。最后，功率转换效率从TriPDI-S设备的7.86％显着提高到TriPDI-Se设备的8.82％。
更新日期：2017-09-15
中文翻译：
用于高效非富勒烯聚合物太阳能电池的硫族元素原子Ann二酰亚胺三聚体
该交流报道了两种新型的具有扭曲结构的硫属元素原子环化的per二酰亚胺（PDI）三聚体TriPDI-S和TriPDI-Se的合成，用于高效的非富勒烯聚合物太阳能电池。由于硒原子引起的较强的分子间相互作用，TriPDI-Se的分子排列更为紧凑。硒环化技术使TriPDI-Se在其共混膜中具有更好的吸收性和结晶性。所得器件的J sc增强了17.15 mA cm -2，填充因子（FF）达到66.8％，远远高于TriPDI-S器件的J sc（J sc = 16.71 mA cm -2； FF = 63.6％）。尽管TriPDI-Se的能级较低，但TriPDI-Se器件仍能获得较高的能级与TriPDI-S器件相比，V oc为0.77 V（V oc = 0.74 V），这主要是由于相关器件中重组的减少所致。最后，功率转换效率从TriPDI-S设备的7.86％显着提高到TriPDI-Se设备的8.82％。
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