Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO₂ appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field‐induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices.

中文翻译：

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硅掺杂的氧化-“易碎”铁电体系

掺杂硅的氧化ha是2011年哈弗尼亚铁电原始报告中使用的材料。此后，它成为许多其他出版物的主题，包括在该州展示世界上第一个铁电场效应晶体管。艺术28纳米技术。尽管进行了许多研究，重点是在存储设备中的应用，但是对这些膜的结构稳定性的全面研究仍有待观察。在这项工作中，使用了约36 nm的膜厚（而不是以前的大多数研究中使用的10 nm）来仔细探查浓度范围如何影响相的演变，掺杂剂分布，场循环效应及其相互作用。在薄膜的宏观铁电响应中。Si：HfO ₂似乎是一个相当脆弱的系统：不同阶段的能量似乎很接近，因此该系统充满了相互竞争的现象。但是，它可以在高达1000°C的高温退火条件下提供铁电或场致铁电。与对常规铁电体（如锆酸钛酸铅）采取的措施类似，必须进行工程设计以确保稳定的界面和化学计量，以在诸如铁电体存储器，超级电容器或能量收集设备等应用中实现稳定的性能。