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Valley-addressable polaritons in atomically thin semiconductors
Nature Photonics ( IF 35.0 ) Pub Date : 2017-07-24 00:00:00 , DOI: 10.1038/nphoton.2017.125
S. Dufferwiel , T. P. Lyons , D. D. Solnyshkov , A. A. P. Trichet , F. Withers , S. Schwarz , G. Malpuech , J. M. Smith , K. S. Novoselov , M. S. Skolnick , D. N. Krizhanovskii , A. I. Tartakovskii

Researchers excite valley-addressable polaritons in MoSe2 incorporated in a photonic microcavity. Understanding of the valley pseudospin retention is revealed and robust states demonstrated.

中文翻译:

原子薄半导体中的谷可寻址极化子

研究人员在光子微腔中掺入的MoSe2中激发了谷可寻址的极化子。揭示了对谷假纺丝保留的了解,并证明了稳健状态。
更新日期:2017-08-02
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