Growth of single-crystal SnO₂ nanowires using a fluorine-doped SnO₂ (FTO) thin film as both the source and substrate is demonstrated for the first time at relatively low temperature (580 °C) which preserves the integrity of the underlying glass support and improves scalability to devices. Furthermore, a microwave hydrothermal process is shown to grow TiO₂ nanorods on these nanowires to create a hierarchical nanoheterostructure that will lead to efficient photogenerated charge carrier separation and rapid transport of electrons to the substrate. This process simplifies nanowire growth by using commercially available and widely used FTO substrates without the need for an additional upstream Sn source and can be used as a high surface area host structure to many other hierarchical structures.

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中文翻译：

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分层SnO的合成2个 纳米线–TiO2个 纳米棒刷固定在可商购的FTO涂层玻璃基板上

首次证明了在相对较低的温度（580°C）下使用掺氟的SnO ₂（FTO）薄膜作为源和衬底的单晶SnO ₂纳米线的生长，该温度保持了下层玻璃载体的完整性并改善了设备的可扩展性。此外，显示出微波水热法可生长TiO ₂这些纳米线上的纳米棒可创建分层的纳米异质结构，从而导致有效的光生电荷载流子分离以及电子向基底的快速传输。此过程无需使用额外的上游Sn源，即可使用市售的和广泛使用的FTO基板简化了纳米线的生长，并且可以用作许多其他层次结构的高表面积主体结构。

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