By linking the dynamics of local piezostrain to the dynamics of local magnetization, we computationally analyzed the speed of a recently proposed scheme of piezostrain-mediated perpendicular magnetization reversal driven by a voltage pulse in magnetoelectric heterostructures. We used a model heterostructure consisting of an elliptical ultrathin amorphous Co₂₀Fe₆₀B₂₀ on top of a polycrystalline Pb(Zr,Ti)O₃ (PZT) thin film. We constructed a diagram showing the speed of perpendicular magnetization reversal as a function of the amplitude of the applied voltage pulse and the stiffness damping coefficient of PZT film. In addition, we investigated the influence of thermal fluctuations on the switching speed. The analyses suggest that the switching time remains well below 10 ns and that the energy dissipation per switching is on the order of femtojoule. The present computational analyses can be generally used to predict the speed of piezostrain-enabled magnetization switching and magnetic domain-wall motion, which critically determines the response time of corresponding piezostrain-enabled spintronic and magnonic devices.

通过将局部压电应变的动力学与局部磁化动力学联系起来，我们通过计算方法分析了最近提出的由磁电异质结构中的电压脉冲驱动的压电应变介导的垂直磁化反转方案的速度。我们使用的模型异质结构由多晶Pb（Zr，Ti）O ₃顶部的椭圆形超薄非晶态Co ₂₀ Fe ₆₀ B _20组成（PZT）薄膜。我们构建了一个图，该图显示了垂直磁化反转的速度与所施加电压脉冲的幅度和PZT膜的刚度阻尼系数的关系。此外，我们研究了热波动对开关速度的影响。分析表明，切换时间保持在10 ns以下，并且每次切换的能量耗散约为毫微微焦耳。当前的计算分析通常可用于预测启用压电应变的磁化切换和磁畴壁运动的速度，从而决定了相应的启用压电应变的自旋电子器件和强磁设备的响应时间。