Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (<250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS₂ and aBN-encapsulated double-gated monolayer (ML) MoS₂ field-effect transistors to evaluate the impact of aBN dielectric environment on MoS₂ optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.

近年来，二维（2D）材料因其原子薄结构和独特的电子和光电特性而受到广泛关注。为了充分发挥其在下一代电子和光子学应用中的潜力，精确控制二维材料周围的介电环境至关重要。二维表面上缺乏成核位点来形成薄而均匀的介电层，通常会导致界面缺陷，从而降低器件性能，成为实现基于二维的器件的主要障碍。在这里，我们展示了一种使用原子层沉积 (ALD) 的晶圆级低温工艺 (<250 °C)，用于合成均匀、保形的非晶氮化硼 (aBN) 薄膜。 ALD 沉积温度在 125 至 250 °C 之间，可形成具有高氧化稳定性的化学计量薄膜，介电强度为 8.2 MV/cm。利用无晶种 ALD 方法，我们在 2D 表面上形成均匀的 aBN 介电层，并制造 aBN/MoS ₂和 aBN 封装的双栅单层 (ML) MoS ₂场效应晶体管的多个量子阱结构，以评估aBN介电环境对MoS ₂光电和电子性能的影响。我们在可扩展 aBN 电介质集成方面的工作为实现下一代电子产品的 2D 材料的理论性能铺平了道路。