2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in acetonitrile (ACN) was sequentially doped into an amphiphilic poly(3-hexylthiophene)-block-poly(3-(2-methoxyethoxy)methylthiophene) copolymer (P3HT-b-P3MEGT) thin film with an end-on orientation, in which both polymer backbones and π–π stacking were oriented vertically to a substrate. Due to the use of the polar solvent (ACN), F4TCNQ was predominantly doped in the amorphous region of P3HT-b-P3MEGT. At low F4TCNQ concentration (c) in ACN, the hole mobility (μ) was slightly lower than that of the neat P3HT-b-P3MEGT film owing to the increase in the distance between the polymer backbones. However, with increasing c, it increased and reached the maximum at c = 0.8 mg mL^–1. The maximum μ was (8.04 ± 0.14) × 10^–2 cm² V^–1 s^–1, which is twice larger than that (4.08 × 10^–2 cm² V^–1 s^–1) of the neat P3HT-b-P3MEGT film. This is attributed to the effective suppression of water-induced traps, generated from the hydrophilic P3MEGT containing an ethylene glycol unit.

中文翻译：

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通过在共轭两亲性二嵌段共聚物中掺杂 F4TCNQ，最大限度地减少水诱导陷阱，从而实现高垂直空穴迁移率


将乙腈（ACN）中的2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷（F4TCNQ）依次掺杂到两亲性聚（3-己基噻吩）-嵌段-聚（3-（2-甲氧基乙氧基）中）甲基噻吩）共聚物（P3HT-b-P3MEGT）薄膜具有端上取向，其中聚合物主链和π-π堆叠都垂直于基底取向。由于使用了极性溶剂（ACN），F4TCNQ 主要掺杂在 P3HT-b-P3MEGT 的非晶区域。在 ACN 中的低 F4TCNQ 浓度 (c) 下，由于聚合物主链之间的距离增加，空穴迁移率 (μ) 略低于纯 P3HT-b-P3MEGT 薄膜。然而，随着c的增加，它增加并在c = 0.8 mg mL ^–1 时达到最大值。最大 μ 为 (8.04 ± 0.14) × 10 ^–2 cm ² V ^–1 s ^–1 ，比 (8.04 ± 0.14) × 10 ^–2 cm ² V ^–1 s ^–1 大两倍4.08 × 10 ^–2 cm ² V ^–1 s ^–1 ）纯 P3HT-b-P3MEGT 薄膜。这归因于含有乙二醇单元的亲水性 P3MEGT 产生的水诱导陷阱的有效抑制。