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Switching of magnetization in quantum antiferromagnets with time-dependent control fields
Physical Review B ( IF 3.7 ) Pub Date : 2024-05-09 , DOI: 10.1103/physrevb.109.174419
Asliddin Khudoyberdiev 1 , Götz S. Uhrig 1
Affiliation  

Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization, can be used to encode “0” and “1” of a bit. Then, the switching of magnetization and the full control of its reorientation are crucial for writing data. We show that the magnetization can be switched efficiently by an external short THz pulse with relatively low amplitude. The coupling to the spin degrees can be direct via the magnetic field or indirect via the electric field inducing spin-polarized charge currents. Our description is based on time-dependent Schwinger boson mean-field theory, which includes the intrinsic dephasing mechanisms beyond a macrospin description. The findings help to introduce the use of antiferromagnets in data storage technology.

中文翻译:

具有随时间变化的控制场的量子反铁磁体中磁化强度的切换

磁态的超快操纵是现代数据存储技术的必要条件之一。量子反铁磁体在这方面是有前途的候选者。有序参数的方向,即亚晶格磁化强度,可用于编码一位的“0”和“1”。那么,磁化强度的切换及其重新定向的完全控制对于写入数据至关重要。我们表明,可以通过幅度相对较低的外部短太赫兹脉冲有效地切换磁化强度。与自旋度的耦合可以通过磁场直接耦合,或者通过诱导自旋极化电荷电流的电场间接耦合​​。我们的描述基于时间相关的施温格玻色子平均场理论,其中包括超出宏自旋描述的内在相移机制。这些发现有助于介绍反铁磁体在数据存储技术中的使用。
更新日期:2024-05-09
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