Two-dimensional (2D) anisotropic materials have garnered significant attention in the realm of anisotropic optoelectronic devices due to their remarkable electrical, optical, thermal, and mechanical properties. While extensive research has delved into the optical and electrical characteristics of these materials, there remains a need for further exploration to identify novel materials and structures capable of fulfilling device requirements under various conditions. Here, we employ heterojunction interface engineering with black phosphorus (BP) to disrupt the C₃ rotational symmetry of monolayer WS₂. The resulting WS₂/BP heterostructure exhibits pronounced anisotropy in exciton emissions, with a measured anisotropic ratio of 1.84 for neutral excitons. Through a comprehensive analysis of magnetic-field-dependent and temperature-evolution photoluminescence spectra, we discern varying trends in the polarization ratio, notably observing a substantial anisotropy ratio of 1.94 at a temperature of 1.6 K and a magnetic field of 9 T. This dynamic behavior is attributed to the susceptibility of the WS₂/BP heterostructure interface strain to fluctuations in magnetic fields and temperatures. These findings provide valuable insights into the design of anisotropic optoelectronic devices capable of adaptation to a range of magnetic fields and temperatures, thereby advancing the frontier of material-driven device engineering.

二维（2D）各向异性材料因其卓越的电学、光学、热学和机械性能而在各向异性光电器件领域引起了广泛关注。虽然对这些材料的光学和电学特性进行了广泛的研究，但仍然需要进一步探索，以确定能够在各种条件下满足设备要求的新型材料和结构。在这里，我们采用黑磷（BP）异质结界面工程来破坏单层WS _{2的C 3}旋转对称性。所得的WS ₂ /BP异质结构在激子发射中表现出明显的各向异性，测得中性激子的各向异性比为1.84。通过对磁场相关和温度演化光致发光光谱的综合分析，我们发现了偏振比的变化趋势，特别是在 1.6 K 温度和 9 T 磁场下观察到 1.94 的各向异性比。这种行为归因于 WS ₂ /BP 异质结构界面应变对磁场和温度波动的敏感性。这些发现为能够适应一系列磁场和温度的各向异性光电器件的设计提供了宝贵的见解，从而推进了材料驱动器件工程的前沿。