当前位置: X-MOL 学术Phys. Rev. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Inhomogeneous Photosusceptibility of VO2 Films at the Nanoscale
Physical Review Letters ( IF 8.6 ) Pub Date : 2024-05-03 , DOI: 10.1103/physrevlett.132.186903
A. J. Sternbach 1 , T. Slusar 2 , F. L. Ruta 1, 3 , S. Moore 1 , X. Chen 1, 4 , M. K. Liu 4 , H. T. Kim 2 , A. J. Millis 1 , R. D. Averitt 5 , D. N. Basov 1
Affiliation  

Pump-probe nano-optical experiments were used to study the light-induced insulator to metal transition (IMT) in thin films of vanadium dioxide (VO2), a prototypical correlated electron system. We show that inhomogeneous optical contrast is prompted by spatially uniform photoexcitation, indicating an inhomogeneous photosusceptibility of VO2. We locally characterize temperature and time dependent variations of the photoexcitation threshold necessary to induce the IMT on picosecond timescales with hundred nanometer spatial resolution. We separately measure the critical temperature TL, where the IMT onsets and the local transient electronic nano-optical contrast at the nanoscale. Our data reveal variations in the photosusceptibility of VO2 within nanoscopic regions characterized by the same critical temperature TL where metallic domains can first nucleate.

中文翻译:

纳米级 VO2 薄膜的不均匀光敏感性

泵浦探针纳米光学实验用于研究二氧化钒薄膜中光致绝缘体到金属的转变(IMT)。视氧浓度2),一个典型的相关电子系统。我们表明,不均匀的光学对比度是由空间均匀的光激发引起的,表明不均匀的光敏感性视氧浓度2。我们局部表征了在皮秒时间尺度上以百纳米空间分辨率诱导 IMT 所需的光激发阈值随温度和时间的变化。我们分别测量临界温度时间L,其中 IMT 开始,并且纳米级的局部瞬态电子纳米光学对比度。我们的数据揭示了光敏感性的变化视氧浓度2在具有相同临界温度特征的纳米级区域内时间L金属域可以首先成核的地方。
更新日期:2024-05-04
down
wechat
bug