Heterojunction formation is the key to adjusting the electronic and optoelectronic properties of various semiconductor devices. There have been various reports on the formation and importance of semiconducting heterojunction devices based on metal oxides. Titanium dioxide (TiO₂) is one of the metal oxides that has many unique properties. TiO₂’s importance is due to its physical and chemical properties such as large band gap, large permittivity, stability, and low leakage current density. In this context, we present the electrical properties of the metal–insulator–semiconductor (MIS) type-TiO₂-based Schottky barrier diode (SBD) in the study. To create a thin layer of TiO₂ on p-type silicon (p-type Si) patterned partially by the laser-induced periodic surface structure (LIPSS) technique, an atomic layer deposition (ALD) technique was used in the study. For comparison, the current–voltage (I–V) characteristics of the TiO₂-based laser-patterned (LP) and nonlaser-patterned (non-LP) diodes were measured at 300 K and in the dark at ±5 V. Classical thermionic emission (TE) theory and Cheung functions were used to investigate the critical diode parameters of the diodes, including ideality factor (n), series resistance (R_s), and barrier height (Φ_b). The n values were obtained as 4.10 and 3.68 from the TE method and Cheung functions for the LP diode, respectively. The Φ_b values were found as 0.68 and 0.69 eV from the TE method and Cheung functions, respectively. According to experimental results, the laser patterning resulted in an increase in the Φ_b values and a decrease in the n values. After laser patterning, it was observed that the device worked effectively, and the ideality factor and barrier height values were improved. This study provides insight into the fabrication and electrical properties of TiO₂-based heterojunction devices.

中文翻译：

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具有 ALD 生长 TiO2 中间层的激光图案化肖特基二极管的电性能

异质结的形成是调节各种半导体器件电子和光电性能的关键。关于基于金属氧化物的半导体异质结器件的形成和重要性已有各种报道。二氧化钛（TiO ₂）是具有许多独特性能的金属氧化物之一。 TiO ₂的重要性在于其物理和化学特性，例如大带隙、大介电常数、稳定性和低漏电流密度。在此背景下，我们在研究中展示了金属-绝缘体-半导体（MIS）型TiO ₂基肖特基势垒二极管（SBD）的电学特性。为了在通过激光诱导周期性表面结构（LIPSS）技术部分图案化的p型硅（p型Si）上创建TiO ₂薄层，研究中使用了原子层沉积（ALD）技术。为了进行比较，在 300 K 和 ±5 V 的黑暗条件下测量了TiO ₂基激光图案化 (LP) 和非激光图案化 (non-LP) 二极管的电流-电压 ( I – V ) 特性。利用热电子发射（TE）理论和Cheung函数研究了二极管的关键参数，包括理想因子（n）、串联电阻（Rs _）和势垒高度（Φb _）。根据 LP 二极管的 TE 方法和 Cheung 函数得出的n值分别为 4.10 和 3.68。从 TE 方法和 Cheung 函数中发现Φ _{b值分别为 0.68 和 0.69 eV。根据实验结果，激光图案化导致Φ b}值增加和n值减少。激光图案化后，观察到该装置有效工作，并且理想因子和势垒高度值得到改善。这项研究提供了对基于 TiO ₂的异质结器件的制造和电性能的深入了解。