Semi‐floating gate field‐effect transistors (SFG‐FETs) based on 2D materials have received much attention due to their unique optoelectronic characteristics, potential applications in near‐memory computing and constructing sensing‐memory‐processing units. Here, the non‐volatile and gate‐controlled multistate photovoltaic response of a WSe2/h‐BN/graphene SFG‐FET is investigated both in experimental and theoretical aspects. Due to the ambipolar carrier transport of WSe2 channel, both electrons and holes can be stored in the graphene floating gate layer, which results in two evident memory windows on the round sweep transfer characteristic curve. Different charge‐stored states of the SFG layer enable the channel to form a lateral junction that can be adjusted by the gate voltage, which leads to the gate‐controlled multistate photovoltaic response. A theoretical model is implemented to explain the memory and the multistate photovoltaic response behaviors in a quasi‐quantitative level. The relationship between the charge‐stored states in the SFG and the photo‐response, as well as its dependence on the gate voltage are systematically analyzed. These research results provide a reliable way for realizing high‐performance multi‐functional photodetectors based on SFG‐FETs and for thorough understanding the complicated optoelectronic behaviors of SFG‐FETs.

中文翻译：

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WSe2/h-BN/石墨烯半浮栅场效应晶体管中的非易失性和栅控多态光伏响应

基于二维材料的半浮栅场效应晶体管（SFG-FET）由于其独特的光电特性、在近存计算和构建传感存储处理单元中的潜在应用而受到广泛关注。这里，WSe 的非易失性和门控多态光伏响应2/h-BN/石墨烯 SFG-FET 在实验和理论方面都进行了研究。由于 WSe 的双极载流子输运2在沟道中，电子和空穴都可以存储在石墨烯浮栅层中，这导致圆形扫描传输特性曲线上有两个明显的存储窗口。 SFG层的不同电荷存储状态使沟道形成可通过栅极电压调节的横向结，从而产生栅极控制的多态光伏响应。建立了一个理论模型来在准定量水平上解释记忆和多态光伏响应行为。系统分析了 SFG 中的电荷存储状态与光响应之间的关系及其对栅极电压的依赖性。这些研究成果为实现基于SFG-FET的高性能多功能光电探测器以及深入理解SFG-FET复杂的光电行为提供了可靠的方法。