4-(trimethylsilyl)morpholine was investigated as a single-source precursor for SiCNO films synthesis. CN and CO species detected by optical emission spectroscopy are suggested to be responsible for the lowering of carbon concentration and preventing graphite formation. Refractive index ranged from 1.5 to 2.0, and optical bandgap varied from 2.0 to 4.6 eV, which pointed the potential use as antireflective coatings in silicon photovoltaic cell technologies and dielectric layers in electronic devices.

中文翻译：

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4-(三甲基甲硅烷基)吗啉作为新型单源前体衍生的富碳等离子体沉积碳氮氧化硅薄膜


研究了 4-(三甲基甲硅烷基)吗啉作为 SiCNO 薄膜合成的单一来源前体。通过光学发射光谱检测到的 CN 和 CO 物种被认为是降低碳浓度并防止石墨形成的原因。折射率范围为1.5至2.0，光学带隙范围为2.0至4.6 eV，这表明其可用作硅光伏电池技术中的抗反射涂层和电子设备中的介电层。