The demand for a high-performance position sensitive detector (PSD), a novel type of photoelectric sensor, is increasing due to advancements in digitization and automation technology. Cadmium sulfide (CdS), a non-centrosymmetric material, holds significant potential in photoelectric devices. However, the pyroelectric effect of CdS in PSDs and its influence on lateral photoresponse are still unknown. In this work, we fabricated an ITO/CdS/Si heterojunction using chemical bath deposition (CBD) and investigated the pyro-phototronic effect under nonuniform illumination. The theory of electron-hole pairs’ generation, separation, and carrier diffusion was carefully considered to understand the underlying mechanisms. Our experimental findings revealed that the device exhibited an exceptionally high position sensitivity (PS) of 1061.3 mV/mm, surpassing the generally observed PS of 655.1 mV/mm induced by single photovoltaic effect by 160.5%. Meanwhile, the PSD demonstrated rapid response times of 0.01 and 0.04 ms, respectively. Moreover, the influence of ambient temperature and electrode distance on the pyro-phototronic effect was well analyzed. Notably, the PSD exhibited remarkable stability even at ambient temperatures up to 150 °C. Despite the considerable working distance of 11 mm, the PS of the PSD remained at 128.99 mV/mm. These findings provide valuable theoretical and experimental foundations for optimizing the design and implementation of high-performance large working distance PSDs.

中文翻译：

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探索 ITO/CdS/Si 异质结位置敏感探测器中巨大横向光响应的焦热光电子效应

由于数字化和自动化技术的进步，对高性能位置敏感探测器（PSD）这种新型光电传感器的需求不断增加。硫化镉（CdS）是一种非中心对称材料，在光电器件中具有巨大的潜力。然而，CdS在PSD中的热释电效应及其对横向光响应的影响仍然未知。在这项工作中，我们使用化学浴沉积（CBD）制造了ITO/CdS/Si异质结，并研究了不均匀照明下的热光电子效应。仔细考虑电子空穴对的产生、分离和载流子扩散理论，以了解潜在的机制。我们的实验结果表明，该器件表现出极高的位置灵敏度（PS），达到 1061.3 mV/mm，比通常观察到的单光伏效应引起的 655.1 mV/mm 的 PS 高出 160.5%。同时，PSD 的快速响应时间分别为 0.01 和 0.04 毫秒。此外，还很好地分析了环境温度和电极距离对热释光电子效应的影响。值得注意的是，即使在高达 150 °C 的环境温度下，PSD 也表现出卓越的稳定性。尽管工作距离相当大，达到 11 mm，PSD 的 PS 仍保持在 128.99 mV/mm。这些发现为优化高性能大工作距离PSD的设计和实现提供了宝贵的理论和实验基础。