Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high-temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer-scale GaN single-crystal integrated electrodes applied in the energy storage field. Herein, Si-doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported. The Si atoms modulate electronic redistribution to improve conductivity and drive nanochannel formation. Apart from that, the distinctive nanochannel configuration with a GaON layer provides adequate active sites and extraordinary structural stability. The GaN-based supercapacitors are assembled and deliver outstanding charge storage capabilities at 140 °C. Surprisingly, 90% retention is maintained after 50 000 cycles. This study opens the pathway toward wafer-scale GaN single-crystal integrated electrodes with self-powered characteristics that are compatible with various (opto)-electronic devices.

中文翻译：

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晶圆级氮化镓集成电极实现稳健的高温储能

氮化镓（GaN）作为宽禁带半导体的代表，凭借优异的结构稳定性和电子迁移率，在高温环境下实现快速电荷传输具有广阔的前景。然而，晶圆级GaN单晶集成电极应用于储能领域仍存在差距。在此，报道了具有厘米级氮氧化镓（GaON）层的硅掺杂GaN纳米通道（用GaN NC表示）。 Si原子调节电子重新分布以提高电导率并驱动纳米通道的形成。除此之外，具有 GaON 层的独特纳米通道配置提供了足够的活性位点和非凡的结构稳定性。 GaN 基超级电容器在 140°C 下组装并提供出色的电荷存储能力。令人惊讶的是，50000 次循环后仍保持 90% 的保留率。这项研究为晶圆级 GaN 单晶集成电极开辟了道路，该电极具有与各种（光电）电子设备兼容的自供电特性。