Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI₃ QDs. Diisooctylphosphinic acid strongly adsorbs to the QDs and increases the formation energy of halide vacancies, enabling nanosurface reconstruction. The QD film with nanosurface reconstruction shows enhanced phase stability, improved photoluminescence endurance under thermal stress and electric field conditions, and a higher activation energy for ion migration. Consequently, we demonstrate perovskite light-emitting diodes (LEDs) that feature an electroluminescence peak at 644 nm. These LEDs achieve an external quantum efficiency of 28.5% and an operational half-lifetime surpassing 30 h at an initial luminance of 100 cd m⁻², marking a tenfold improvement over previously published studies. The integration of these high-performance LEDs with specifically designed thin-film transistor circuits enables the demonstration of solution-processed active-matrix perovskite displays that show a peak external quantum efficiency of 23.6% at a display brightness of 300 cd m⁻². This work showcases nanosurface reconstruction as a pivotal pathway towards high-performance QD-based optoelectronic devices.

钙钛矿量子点（QD）由于其高色纯度、可调光电性能和优异的溶液加工性能，在各种光子应用中具有广阔的前景。表面特征影响其光电性能，而表面缺陷仍然是进步的主要障碍。在这里，我们开发了一种利用二异辛基次膦酸介导的合成与氢碘酸蚀刻驱动的纳米表面重建相结合来稳定 CsPbI ₃ QD 的策略。二异辛基次膦酸强烈吸附到量子点上并增加卤化物空位的形成能，从而实现纳米表面重建。具有纳米表面重构的QD薄膜表现出增强的相稳定性、在热应力和电场条件下改善的光致发光耐受性以及更高的离子迁移激活能。因此，我们展示了具有 644 nm 电致发光峰的钙钛矿发光二极管 (LED)。这些LED在100 cd m ^-2的初始亮度下实现了28.5%的外量子效率和超过30小时的工作半衰期，比之前发表的研究提高了十倍。这些高性能LED与专门设计的薄膜晶体管电路的集成使得能够演示溶液处理的有源矩阵钙钛矿显示器，该显示器在300 cd m ^-2的显示亮度下显示出23.6%的峰值外部量子效率。这项工作展示了纳米表面重建是实现基于量子点的高性能光电器件的关键途径。