The development of flexible electronics for detecting solar-blind deep ultraviolet (UV-C) light holds great promise for emerging technologies. Here, flexible photoelectrochemical photodetectors (PEC-PDs) are demonstrated for self-powered solar-blind UV-C sensing based on one-step radio frequency sputtered amorphous gallium oxide (a-Ga₂O₃) thin films on indium tin oxide-coated polyethylene naphthalate (ITO/PEN) substrates in a simple and low-cost manner. Surface functionalization of the ITO/PEN substrates with silver nanowires (Ag NWs) successfully embedded within the a-Ga₂O₃ films significantly enhances the optoelectronic performance. Incorporating Ag NWs reduces charge transfer resistance and potential barrier, while enhancing built-in electric field at the Ag NWs/a-Ga₂O₃ interface, synergistically facilitating efficient electron transport. Consequently, the Ag NW-modified PEC-PDs exhibit approximately two-fold increases in key metrics including responsivity (11.23 mA W⁻¹) and response times (0.07/0.09 s rise/decay) under 254 nm illumination compared to pristine devices. Moreover, the Ag NW-functionalized PEC-PDs demonstrate superb mechanical flexibility and fatigue durability, maintaining ≈95% of the initial photoresponse current and responsivity after 500 bending cycles. This work provides valuable insights into designing high-performance flexible self-powered PEC-PDs through ingenious photoanode engineering.

中文翻译：

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基于银纳米线嵌入非晶 Ga2O3 薄膜的柔性自供电光电化学型日盲光电探测器

用于检测日盲深紫外 (UV-C) 光的柔性电子器件的发展为新兴技术带来了巨大的前景。在这里，柔性光电化学光电探测器 (PEC-PD) 被演示用于自供电日盲 UV-C 传感，基于氧化铟锡涂层上的一步射频溅射非晶氧化镓 (a-Ga ₂ O ₃ ) 薄膜以简单且低成本的方式制备聚萘二甲酸乙二醇酯（ITO/PEN）基材。 ITO/PEN 基板的表面功能化与银纳米线 (Ag NW) 成功嵌入 a-Ga ₂ O ₃薄膜中，显着提高了光电性能。掺入Ag NWs可降低电荷传输电阻和势垒，同时增强Ag NWs/a-Ga ₂ O ₃界面处的内置电场，协同促进高效的电子传输。因此，与原始器件相比，Ag NW 修饰的 PEC-PD 在 254 nm 照明下的响应率 (11.23 mA W ^-1 ) 和响应时间 (0.07/0.09 s 上升/衰减) 等关键指标上表现出大约两倍的增加。此外，Ag NW功能化的PEC-PD表现出卓越的机械灵活性和疲劳耐久性，在500次弯曲循环后仍保持约95%的初始光响应电流和响应率。这项工作为通过巧妙的光电阳极工程设计高性能灵活的自供电 PEC-PD 提供了宝贵的见解。