In this work, tungsten oxide (WO₃) thin films are grown on FTO glass using a facile spin coating method and an ink composed of WO₃ nanoparticles synthesized under varying concentrations of cetyltrimethylammonium bromide (CTAB) surfactant. The influence of variation of the CTAB concentration on the quality and electrochemical performance of the prepared WO₃ thin films is investigated. Cyclic voltammetry and electrochemical impedance spectroscopic analysis confirm that the thin film prepared with a CTAB/Na₂WO₄·2H₂O molar ratio of 2.451 exhibits significantly enhanced electrochemical performance, demonstrating fast reaction kinetics for Li⁺ ions (diffusion coefficient = 1.08 × 10⁻⁹ cm² s⁻¹) compared to the pristine WO₃ thin film (diffusion coefficient = 1.42 × 10⁻¹⁰ cm² s⁻¹) lacking any CTAB addition. These improved electrochemical characteristics of modified WO₃ thin films are attributed to the increased porosity and a higher electroactive surface area.

中文翻译：

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探讨十六烷基三甲基溴化铵表面活性剂对氧化钨薄膜电化学性能的影响

在这项工作中，使用简单的旋涂方法和由在不同浓度的十六烷基三甲基溴化铵（CTAB）表面活性剂下合成的WO ₃纳米颗粒组成的墨水，在FTO玻璃上生长氧化钨（WO ₃）薄膜。研究了CTAB浓度的变化对制备的WO ₃薄膜的质量和电化学性能的影响。循环伏安法和电化学阻抗谱分析证实，CTAB/Na ₂ WO ₄ ·2H _{2 O摩尔比为2.451制备的薄膜表现出显着增强的电化学性能，表现出Li} ⁺离子的快速反应动力学（扩散系数= 1.08 × 10 ^-9 cm ² s ^-1 ) 与未添加任何 CTAB 的原始 WO ₃薄膜（扩散系数 = 1.42 × 10 ^-10 cm ² s ^-1 ）相比。改性WO ₃薄膜的这些改进的电化学特性归因于增加的孔隙率和更高的电活性表面积。