Van der Waals (vdW) heterostructure composed of two-dimensional (2D) materials and 2D perovskite has shown excellent optoelectrical properties recently, while the interfacial coupling is less investigated. Here, van der Waals InSe/(CHNH)(CHNH)PbI heterostructure is fabricated and systemically investigated by photoluminescence (PL) spectroscopy. An optical broadband emission is generated due to the formation of heterostructure. The first principle calculation and variable PL spectra suggest the dynamic generation of defects such as iodine vacancy and charge states. Electron–phonon coupling of the 2D perovskite is weakened from −127 meV to −90 meV in the heterostructure. The band offset causes the built-in electrical field, which strengthens the optoelectrical response of heterostructure devices. The results deepen the understanding of the interfacial optoelectrical dynamic of 2D perovskite-related vdW heterostructure and help develop superior optoelectrical vdW heterostructure devices.

中文翻译：

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二维钙钛矿/InSe异质结构中的界面光电动力学

由二维（2D）材料和2D钙钛矿组成的范德华（vdW）异质结构最近表现出优异的光电性能，但界面耦合的研究较少。在此，制备了范德华 InSe/(CHNH)(CHNH)PbI 异质结构，并通过光致发光 (PL) 光谱进行了系统研究。由于异质结构的形成而产生光学宽带发射。第一原理计算和可变 PL 光谱表明碘空位和电荷态等缺陷的动态生成。在异质结构中，二维钙钛矿的电子-声子耦合从-127 meV减弱到-90 meV。带偏移引起内置电场，从而增强异质结构器件的光电响应。研究结果加深了对二维钙钛矿相关vdW异质结构界面光电动力学的理解，有助于开发优异的光电vdW异质结构器件。