The optimization of III-V-based photovoltaic cells involves addressing the trade-off between optical losses due to grid shading and electrical losses due to series resistance. In this work, we overcome the boundary conditions of this optimization problem by increasing the grid line height. Contrary to a few micrometer high evaporated metal grid lines, distributed circuit modeling of 1-cm² GaAs photonic power converters suggests that 15-μm high grid lines yield the best performances, especially for high-current operation in the 1 to 10 A cm⁻² range. We have successfully implemented a silver plating process into the fabrication scheme of these devices. Current–voltage measurements under intense illumination demonstrate fill factors above 80% at currents up to 35.8 A, highlighting the capability to extract such high currents without major series resistance losses. Under equivalent monochromatic input power of 62.6 W, this results in a maximum power output of 35.5 W from the 1-cm² single-junction photovoltaic cell. This development enables optical power links with largely increased power densities, reducing the material demand of precious semiconductors and associated costs.

中文翻译：

---

通过电镀技术克服 cm2 尺寸高功率 GaAs 光子功率转换器的光电网格设计权衡

基于 III-V 族的光伏电池的优化涉及解决网格遮蔽导致的光学损耗和串联电阻导致的电损耗之间的权衡。在这项工作中，我们通过增加网格线高度来克服这个优化问题的边界条件。与几微米高的蒸发金属栅极线相反，1 cm ² GaAs 光子功率转换器的分布式电路建模表明，15 μm 高的栅极线可产生最佳性能，特别是对于 1 至 10 A cm 的高电流运行^{- 2}范围。我们已成功地将镀银工艺应用到这些设备的制造方案中。强光照下的电流-电压测量表明，在电流高达 35.8 A 时，填充因子高于 80%，凸显了在没有重大串联电阻损耗的情况下提取如此高电流的能力。在62.6 W的等效单色输入功率下，1-cm ²单结光伏电池的最大功率输出为35.5 W。这一发展使光功率链路的功率密度大大提高，从而减少了贵重半导体的材料需求和相关成本。