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Enhanced electromagnetic shielding with ultrathin VGNs-Metal hybrid structures
Carbon ( IF 10.9 ) Pub Date : 2024-04-14 , DOI: 10.1016/j.carbon.2024.119144
Jingzhe Zhang , Honglie Shen , Zehui Wang , Tianru Wu

Designing and preparing lightweight electromagnetic shielding materials at the micron level is crucial for aerospace and military applications. Vertical graphene nanowalls (VGNs) offer high efficiency for electromagnetic shielding due to attributes such as high carrier mobility, porosity, and low density. This study presents the preparation of ultra-thin VGNs/metal stacked films via plasma-enhanced chemical vapor deposition (PECVD) for VGNs, and combined electron beam evaporation (EBE) with cyclic PECVD for metal layers. The PECVD technique ensures homogeneity and controllable thickness of the VGNs. The experimental results demonstrate that the interface between the VGNs and the metal layer exhibits good interfacial contact, resulting in high carrier mobility. Furthermore, incorporating a metal layer with a thickness ratio of 10 % significantly enhances conductivity by an order of magnitude. The hybrid structures exhibit remarkable electromagnetic shielding effectiveness per unit thickness (∼5300 dB mm−1) evaluated in the X-band range (8–12 GHz). Stacked films as thin as 0.01 mm achieve up to 53.4 dB of electromagnetic shielding. Finite element simulations indicate that the presence of opposing electric fields at the graphene-metal interface contributes to higher ohmic loss. The coupling effect at the interface significantly contributes to the material's excellent electromagnetic shielding effectiveness.



中文翻译:

采用超薄 VGN-金属混合结构增强电磁屏蔽

设计和制备微米级的轻质电磁屏蔽材料对于航空航天和军事应用至关重要。垂直石墨烯纳米墙 (VGN) 具有高载流子迁移率、孔隙率和低密度等特性,可提供高效率的电磁屏蔽。本研究介绍了通过用于 VGN 的等离子体增强化学气相沉积 (PECVD) 以及用于金属层的循环电子束蒸发 (EBE) 和循环 PECVD 的组合来制备超薄 VGN/金属堆叠薄膜。 PECVD 技术确保了 VGN 的均匀性和厚度可控。实验结果表明,VGN与金属层之间的界面表现出良好的界面接触,从而产生高载流子迁移率。此外,加入厚度比为10%的金属层可将电导率显着提高一个数量级。在X波段范围(8-12 GHz)中评估,混合结构表现出显着的每单位厚度电磁屏蔽效能(∼5300 dB mm -1 )。薄至 0.01 毫米的堆叠薄膜可实现高达 53.4 dB 的电磁屏蔽。有限元模拟表明,石墨烯-金属界面处存在反向电场会导致更高的欧姆损耗。界面处的耦合效应对材料优异的电磁屏蔽效能有很大贡献。

更新日期:2024-04-14
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