Heavy‐metal‐free III–V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near‐infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light‐emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13.3%, a turn‐on voltage of 1.5V, and a maximum radiance of 12 Wsr−1m−2. Importantly, the LEDs exhibit an extensive emission dynamic range, characterized by a nearly linear correlation between emission intensity and current density, which can be attributed to the efficient passivation provided by the thick ZnSe shell. The obtained results are comparable to state‐of‐the‐art PbS QD LEDs. Furthermore, it should be stressed not only that the fabricated LEDs are fully RoHS‐compliant but also that the emitting InAs QDs are prepared via a synthetic route based on a non‐pyrophoric, cheap, and commercially available as precursor, namely tris(dimethylamino)‐arsine.

中文翻译：

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基于胶体 InAs/ZnSe 核/厚壳量子点的近红外发光二极管

无重金属的 III-V 族胶体量子点（QD）在光电子学中展现出有前景的应用前景。其中，InAs QD 在近红外光谱域的吸收和发射方面表现出优异的光学性能。最近，InAs 量子点的光致发光量子产率得到了显着提高，通过在 InAs 核顶部战略性地过度生长厚的 ZnSe 壳，在 900 nm 波长下实现了 70% 的光致发光量子产率。在本研究中，基于这种类型的InAs/ZnSe量子点制造了发光二极管（LED），达到了13.3%的外量子效率（EQE）、1.5V的开启电压和1.5V的最大辐射亮度。 12 瓦斯尔−1米−2。重要的是，LED 表现出广泛的发射动态范围，其特点是发射强度和电流密度之间几乎呈线性相关，这可归因于厚 ZnSe 壳提供的有效钝化。所得结果可与最先进的 PbS QD LED 相媲美。此外，应该强调的是，不仅制造的 LED 完全符合 RoHS 标准，而且发光 InAs QD 是通过基于不自燃、廉价且可商业化的前体（即三（二甲氨基））的合成路线制备的。 ‐胂。