Halide perovskite-based resistive switching memory (memristor) has potential in an artificial synapse. However, an abrupt switch behavior observed for a formamidinium lead triiodide (FAPbI₃)-based memristor is undesirable for an artificial synapse. Here, we report on the δ-FAPbI₃/atomic-layer-deposited (ALD)-SnO₂ bilayer memristor for gradual analogue resistive switching. In comparison to a single-layer δ-FAPbI₃ memristor, the heterojunction δ-FAPbI₃/ALD-SnO₂ bilayer effectively reduces the current level in the high-resistance state. The analog resistive switching characteristics of δ-FAPbI₃/ALD-SnO₂ demonstrate exceptional linearity and potentiation/depression performance, resembling an artificial synapse for neuromorphic computing. The nonlinearity of long-term potentiation and long-term depression is notably decreased from 12.26 to 0.60 and from −8.79 to −3.47, respectively. Moreover, the δ-FAPbI₃/ALD-SnO₂ bilayer achieves a recognition rate of ≤94.04% based on the modified National Institute of Standards and Technology database (MNIST), establishing its potential in an efficient artificial synapse.

中文翻译：

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基于 δ-FAPbI3/原子层沉积 SnO2 双层忆阻器的人工突触

基于卤化物钙钛矿的电阻开关存储器（忆阻器）在人工突触方面具有潜力。然而，基于甲脒三碘化铅（FAPbI ₃）的忆阻器观察到的突然开关行为对于人工突触来说是不期望的。在这里，我们报告了用于渐进模拟电阻切换的δ-FAPbI ₃ /原子层沉积（ALD）-SnO ₂双层忆阻器。与单层δ-FAPbI ₃忆阻器相比，异质结δ-FAPbI ₃ /ALD-SnO ₂双层有效降低了高阻状态下的电流水平。 δ-FAPbI ₃ /ALD-SnO ₂的模拟电阻开关特性表现出出色的线性度和增强/抑制性能，类似于用于神经形态计算的人工突触。长时程增强和长期抑制的非线性分别显着从 12.26 下降到 0.60 和从 -8.79 下降到 -3.47。此外，基于修改后的美国国家标准与技术研究所数据库（MNIST），δ-FAPbI ₃ /ALD-SnO _{2双层的识别率达到≤94.04%，确立了其在高效人工突触中的潜力。}