Low‐cost and high‐performance electronics based on synthetically simple materials are required to fuel the deployment of smart packaging and wearable electronics. Metal phthalocyanines (MPcs) are promising semiconductors for use in n‐type organic thin film transistors (OTFTs) but often require high operating voltages. The first silicon phthalocyanine‐based OTFT with a polymer dielectric is reported as an alternative to traditional metal oxide dielectrics. Incorporating poly(methyl methacrylate) (PMMA) as the dielectric successfully reduces the threshold voltage (VT) of bispentafluorophenoxy SiPc (F10‐SiPc) from 14.9V to 7.3V while retaining high mobility. Further reduction in VT is obtained by using copolymers and blends of PMMA and dimethylamino ethyl methacrylate (DMAEMA)‐containing polymers, where a higher molar fraction of DMAEMA leads to a consistent drop in VT to ‐0.7 V. The electron‐donating groups of the tertiary amines in the DMAEMA show clear interfacial doping of the semiconductor, reducing the voltage required to populate the dielectric/semiconductor interface with charge carriers and turn on the device. Blending trace amounts of DMAEMA‐containing copolymers with PMMA proves to be an effective strategy for reducing the VT while keeping the charge mobility high, unlike when using pure copolymers with elevated DMAEMA content. Time of flight secondary ion mass spectroscopy (ToF‐SIMS) and X‐ray photoelectron spectroscopy (XPS) demonstrate that the DMAEMA‐containing copolymer is floating to the surface of the PMMA blend at the dielectric–semiconductor interface, which explains the reduced VT. Synchrotron scanning transmission X‐ray microscopy (STXM) demonstrates that PMMA promotes a more edge‐on orientation of F10‐SiPc films, compared to the more face‐on orientation when deposited on the DMAEMA containing copolymer. This study demonstrates a straightforward process for designing dielectric polymers and their blends for the reduction in VT for n‐type OTFTs.

中文翻译：

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供电子功能聚合物电介质可降低 n 型有机薄膜晶体管的阈值电压

需要基于合成简单材料的低成本和高性能电子产品来推动智能包装和可穿戴电子产品的部署。金属酞菁 (MPc) 是用于 n 型有机薄膜晶体管 (OTFT) 的有前景的半导体，但通常需要高工作电压。据报道，第一个具有聚合物电介质的基于硅酞菁的 OTFT 可作为传统金属氧化物电介质的替代品。采用聚甲基丙烯酸甲酯 (PMMA) 作为电介质成功降低了阈值电压 (V时间) 双五氟苯氧基 SiPc (F10‐SiPc）从 14.9V 至 7.3V，同时保持高迁移率。进一步减少V时间是通过使用 PMMA 和含有甲基丙烯酸二甲氨基乙酯 (DMAEMA) 的聚合物的共聚物和共混物获得的，其中较高摩尔分数的 DMAEMA 会导致V时间至 ‐0.7 V。DMAEMA 中叔胺的给电子基团显示出明显的半导体界面掺杂，降低了用电荷载流子填充电介质/半导体界面并打开器件所需的电压。将微量的含 DMAEMA 的共聚物与 PMMA 混合被证明是减少V时间同时保持较高的电荷迁移率，这与使用 DMAEMA 含量较高的纯共聚物不同。飞行时间二次离子质谱 (ToF-SIMS) 和 X 射线光电子能谱 (XPS) 表明，含 DMAEMA 的共聚物漂浮在介电-半导体界面处的 PMMA 共混物表面，这解释了V时间。同步加速器扫描透射 X 射线显微镜 (STXM) 表明 PMMA 促进 F 的更边缘取向10‐SiPc 薄膜，与沉积在含有 DMAEMA 的共聚物上时的更多面朝取向相比。这项研究展示了设计介电聚合物及其共混物的简单过程，以减少V时间对于n型OTFT。