The integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

中文翻译：

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2D 范德华结构中铁电极化介导的光学特性调制

二维铁电材料与二维光电材料的集成为解决与层状半导体中的受控掺杂和器件集成相关的问题提供了一条有前途的途径。铁电体固有的可逆且非易失性残余极化可以提供稳定的n- 或者p二维半导体的‐型掺杂。尽管二维材料的掺杂策略取得了进步，但现有技术和掺杂后表征方法仍存在局限性，包括实现掺杂结构的高分辨率图形描述的挑战。这里，一个WS2/磷化铜2S6异质结构被证明是铁电 CuInP 的残余极化2S6具有反平行方向的区域提供与 WS 符号相反的屏蔽电荷2单层。这显着改变了直接带隙半导体复合发光中中性激子和带负电的三重子的比率，从而为二维系统中的可控、非易失性调制提供了一种可行的方法。除了通过界面工程提出二维半导体图案化掺杂和有效调节的可行策略之外，这项工作还增强了对铁电体和半导体之间相互作用的理解。