Although the silicon heterojunction (SHJ) solar cell is the crystalline silicon solar cell with highest conversion efficiency at present, its higher cost of production line has been a factor restricting its industrial development. The use of hot wire chemical vapor deposition (HWCVD) technology instead of the mainstream plasma enhanced chemical vapor deposition (PECVD) technology for the deposition of amorphous silicon films can effectively reduce the cost of equipment and processing, and has a bright future. In recent years, i-a-Si:H films grown by PECVD have obtained great improvement in passivation quality, whereas HWCVD technology has been neglected in this field. This has significantly limited the development and application of HWCVD technology in SHJ cell production. In this work, we exploited the differences in the films properties and microstructures deposited by various hot-wire temperatures and successfully developed a structure for the high-passivation-quality i-a-Si:H film grown by HWCVD, consisting of a buffer layer and a double-layer bulk stack. By introducing the buffer layer grown with the 1650 °C hot-wire temperature and pure silane, the effective minority carrier lifetime was improved from 2.3 ms to 7.5 ms, and a cell efficiency enhancement of 0.4%abs was obtained. By depositing the bulk layer sequentially with hot-wire temperatures of 1800 °C and 1900 °C, the passivation quality and the conductance were both improved. An effective minority carrier lifetime of 8 ms and a further cell efficiency enhancement of 0.15%abs were obtained. Finally, SHJ solar cell efficiency of 24.35% was obtained with a home-made HWCVD-based pilot SHJ cell line.

中文翻译：

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HWCVD 本征氢化非晶硅薄膜的结构优化与生长

虽然硅异质结（SHJ）太阳能电池是目前转换效率最高的晶体硅太阳能电池，但其较高的生产线成本一直是制约其产业发展的因素。采用热丝化学气相沉积（HWCVD）技术代替主流的等离子体增强化学气相沉积（PECVD）技术进行非晶硅薄膜的沉积，可以有效降低设备和加工成本，前景广阔。近年来，PECVD法生长的ia-Si:H薄膜在钝化质量方面取得了很大的进步，而HWCVD技术在该领域一直被忽视。这极大地限制了HWCVD技术在SHJ电池生产中的发展和应用。在这项工作中，我们利用不同热线温度沉积的薄膜特性和微观结构的差异，成功开发了一种通过 HWCVD 生长的高钝化质量 ia-Si:H 薄膜的结构，该结构由缓冲层和缓冲层组成。双层散装堆叠。通过引入在 1650 °C 热线温度和纯硅烷下生长的缓冲层，有效少数载流子寿命从 2.3 ms 提高到 7.5 ms，电池效率提高了 0.4%abs。通过在 1800 °C 和 1900 °C 的热线温度下顺序沉积体层，钝化质量和电导率均得到改善。有效少数载流子寿命为 8 ms，电池效率进一步提高了 0.15%abs。最终，利用自制的基于HWCVD的中试SHJ电池线获得了24.35%的SHJ太阳能电池效率。