Al/Er-codoped ZnO films on epitaxial Si substrates are used to fabricate npn heterojunction devices. By controlling the hole concentration in the p-layer of epitaxial Si substrates, the controllable design of the diffusion behavior of minority carriers is achieved, leading to the improvement of the carrier injection of npn heterojunction devices, and the equilibrium between the electron injection and the electric field intensity for acceleration is established. Due to the optimization of the electrical characteristics of devices, the electroluminescence intensity of Er³⁺ ions therewith is enhanced by an order of magnitude, resulting in an optical power of 8.26 μW/cm² at 1540 nm. Additionally, the unpackaged npn heterojunction devices with an onset voltage of 2 V function continuously for 1400 h in an atmospheric environment with less than 10% optical power attenuation. This technique suggests a prototype device with exceptional photoelectric qualities and high stability, demonstrating its great potential in integrated silicon photonics.

中文翻译：

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用于增强 Er3+ 相关电致发光的 npn 器件中少数载流子扩散的可控设计

外延 Si 衬底上的 Al/Er 共掺杂 ZnO 薄膜用于制造npn异质结器件。通过控制外延硅衬底p层空穴浓度，实现少数载流子扩散行为的可控设计，从而改善npn异质结器件的载流子注入，以及电子注入与电子注入之间的平衡。建立加速电场强度。由于器件电学特性的优化，Er ³⁺离子的电致发光强度增强了一个数量级，在1540 nm处的光功率达到8.26 μW/cm ² 。此外，未封装的npn异质结器件的起始电压为2 V，在大气环境中连续工作1400小时，光功率衰减小于10%。该技术提出了一种具有卓越光电品质和高稳定性的原型器件，展示了其在集成硅光子学方面的巨大潜力。