Write-once read-many times (WORM) resistive memories fabricated using perovskite barium titanate (BaTiO, BTO) resistive switching (RS) layer are demonstrated in this study. The BTO RS layers with thicknesses of 3.2–8.5 nm are fabricated by radio frequency sputtering at room temperature. Annealing processes at 400–600 °C are used to modify the oxygen vacancy content in the BTO layer and thereby control the OFF-state current of an Al/BTO/n-Si WORM device. The I/I ratio increases with increasing annealing temperature until 500 °C. A negative effect is observed when the temperature further rises to 600 °C. The optimal Al/BTO/n-Si device shows an ultra-high I/I ratio of 10 and a low coefficient of variation of 6% for set voltages. The writing speed is 80 ns and the power consumption is 400 pJ. In addition, retention and stress tests are performed to confirm high data storage reliability of the device. Mechanisms for voltage-polarity independent writing process and the related energy band diagrams are explored.

中文翻译：

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钛酸钡一次写入多次读取电阻式存储器，超高开/关电流比达108

本研究展示了使用钙钛矿钛酸钡（BaTiO、BTO）电阻开关（RS）层制造的一次写入多次读取（WORM）电阻式存储器。 BTO RS层厚度为3.2-8.5 nm，在室温下通过射频溅射制备。 400-600°C 的退火工艺用于改变 BTO 层中的氧空位含量，从而控制 Al/BTO/n-Si WORM 器件的断态电流。 I/I 比随着退火温度的升高而增加，直至 500 °C。当温度进一步升至 600 °C 时，会出现负面影响。最佳的 Al/BTO/n-Si 器件在设定电压下表现出 10 的超高 I/I 比和 6% 的低变异系数。写入速度为80 ns，功耗为400 pJ。此外，还执行保留和压力测试，以确认设备的高数据存储可靠性。探索了电压极性无关的写入过程的机制和相关的能带图。