Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly dangling bonds (DBs) and the undesirable oxides, the photoluminescence performance and stability of InP QDs remain to be improved. Previous investigations largely focus on eliminating P–DBs and resultant surface oxidation states; however, little attention has been paid to the adverse effects of the surface In–DBs on InP QDs. This work demonstrates a facile one-step surface peeling and passivation treatment method for both In- and P–DBs for InP QDs. Meanwhile, the surface treatment may also effectively support the encapsulation of the ZnSe shell. Finally, the generated InP/ZnSe QDs display a narrower full width at half-maximum (fwhm) of ∼48 nm, higher photoluminescence quantum yields (PLQYs) of ∼70%, and superior stability. This work enlarges the surface chemistry engineering consideration of InP QDs and considerably promotes the development of efficient and stable optoelectronic devices.

中文翻译：

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磷化铟量子点中多重固有悬挂键的表面钝化

磷化铟 (InP) 量子点 (QD) 已成为最受认可的镉基光电系统毒性较小替代品。由于特别悬空键（DB）和不需要的氧化物，InP QD的光致发光性能和稳定性仍有待提高。之前的研究主要集中在消除 P-DB 和由此产生的表面氧化态；然而，很少有人关注表面In-DBs对InP QDs的不利影响。这项工作展示了一种针对 InP 量子点的 In-DB 和 P-DB 的简便的一步式表面剥离和钝化处理方法。同时，表面处理也可以有效支持ZnSe壳的封装。最后，生成的 InP/ZnSe QD 显示出更窄的半峰全宽（fwhm），约为 48 nm，光致发光量子产率（PLQY）较高，约为 70%，并且具有优异的稳定性。这项工作扩大了InP量子点的表面化学工程考虑，并极大地促进了高效、稳定的光电器件的发展。