Heat is an inexhaustible source of energy, and it can be exploited by thermoelectronics to produce electrical power or electrical responses. The search for a low-cost thermoelectric material that could achieve high efficiencies and can also be straightforwardly scalable has turned significant attention to the halide perovskite family. Here, we report the thermal voltage response of bismuth-based perovskite derivates and suggest a path to increase the electrical conductivity by applying chalcogenide doping. The films were produced by drop-casting or spin coating, and sulfur was introduced in the precursor solution using bismuth triethylxanthate. The physical–chemical analysis confirms the substitution. The sulfur introduction caused resistivity reduction by 2 orders of magnitude, and the thermal voltage exceeded 40 mV K^–1 near 300 K in doped and undoped bismuth-based perovskite derivates. X-ray diffraction, Raman spectroscopy, and grazing-incidence wide-angle X-ray scattering were employed to confirm the structure. X-ray photoelectron spectroscopy, elemental analysis, scanning electron microscopy, and energy-dispersive X-ray spectroscopy were employed to study the composition and morphology of the produced thin films. UV–visible absorbance, photoluminescence, inverse photoemission, and ultraviolet photoelectron spectroscopies have been used to investigate the energy band gap.

中文翻译：

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热电压超过 40 mV/K 的铋基钙钛矿衍生物

热量是取之不尽用之不竭的能源，热电子学可以利用热量来产生电力或电响应。寻找一种既能实现高效率又能直接扩展的低成本热电材料已将人们的注意力转向卤化物钙钛矿家族。在这里，我们报告了基于铋的钙钛矿衍生物的热电压响应，并提出了通过应用硫属化物掺杂来提高电导率的途径。这些薄膜是通过滴铸或旋涂生产的，并使用三乙基黄原酸铋将硫引入前体溶液中。物理化学分析证实了替代。硫的引入导致电阻率降低了2个数量级，并且在掺杂和未掺杂的铋基钙钛矿衍生物中，热电压在300 K附近超过了40 mV K ^–1 。采用X射线衍射、拉曼光谱和掠入射广角X射线散射来确认结构。采用X射线光电子能谱、元素分析、扫描电子显微镜和能量色散X射线能谱来研究所制备薄膜的成分和形貌。紫外可见光吸收、光致发光、反光电子发射和紫外光电子能谱已被用来研究能带隙。