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Complementary integration of organic electrochemical transistors for front-end amplifier circuits of flexible neural implants
Science Advances ( IF 13.6 ) Pub Date : 2024-03-22 , DOI: https://www.science.org/doi/10.1126/sciadv.adi9710
Ilke Uguz, David Ohayon, Sinan Yilmaz, Sophie Griggs, Rajendar Sheelamanthula, Jason D. Fabbri, Iain McCulloch, Sahika Inal, Kenneth L. Shepard

The ability to amplify, translate, and process small ionic potential fluctuations of neural processes directly at the recording site is essential to improve the performance of neural implants. Organic front-end analog electronics are ideal for this application, allowing for minimally invasive amplifiers owing to their tissue-like mechanical properties. Here, we demonstrate fully organic complementary circuits by pairing depletion- and enhancement-mode p- and n-type organic electrochemical transistors (OECTs). With precise geometry tuning and a vertical device architecture, we achieve overlapping output characteristics and integrate them into amplifiers with single neuronal dimensions (20 micrometers). Amplifiers with combined p- and n-OECTs result in voltage-to-voltage amplification with a gain of >30 decibels. We also leverage depletion and enhancement-mode p-OECTs with matching characteristics to demonstrate a differential recording capability with high common mode rejection rate (>60 decibels). Integrating OECT-based front-end amplifiers into a flexible shank form factor enables single-neuron recording in the mouse cortex with on-site filtering and amplification.

中文翻译:

用于柔性神经植入物前端放大器电路的有机电化学晶体管的互补集成

直接在记录位点放大、翻译和处理神经过程的小离子电位波动的能力对于提高神经植入物的性能至关重要。有机前端模拟电子器件非常适合这种应用,由于其类似组织的机械特性,可以实现微创放大器。在这里,我们通过配对耗尽型和增强型 p 型和 n 型有机电化学晶体管 (OECT) 展示了完全有机互补电路。通过精确的几何调整和垂直器件架构,我们实现了重叠的输出特性,并将它们集成到具有单神经元尺寸(20微米)的放大器中。结合 p-OECT 和 n-OECT 的放大器可实现电压间放大,增益 >30 分贝。我们还利用具有匹配特性的耗尽型和增强型 p-OECT 来展示具有高共模抑制率(> 60 分贝)的差分记录能力。将基于 OECT 的前端放大器集成到灵活的柄形状因子中,可以通过现场滤波和放大在小鼠皮层中进行单神经元记录。
更新日期:2024-03-23
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