Carbon nanotubes (CNTs), due to excellent electronic properties, are emerging as a promising semiconductor for diverse electronic applications with superiority over silicon. However, until now, the supposed superiority of CNTs by “head-to-head” comparison within a well-defined voltage range remains unrealized. Here, we report aligned CNT (ACNT)–based electronics on a glass wafer and successfully develop a 250-nm gate length ACNT-based field-effect transistor (FET) with an almost identical transfer curve to a “90-nm” node silicon device, indicating a three- to four-generation superiority. Moreover, a record gate delay of 9.86 ps is achieved by our ring oscillator, which exceeds silicon even at a lower supply voltage. Furthermore, the fabrication of basic logic gates indicates the potential for further digital integrated circuits. All of these results highlight ACNT-based FETs on the glass wafer as an effective solution/platform for further development of CNT-based electronics.

中文翻译：

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玻璃晶圆上基于碳纳米管的对齐电子器件

碳纳米管（CNT）由于具有优异的电子特性，正在成为一种有前途的半导体，适用于各种电子应用，并且比硅具有优越性。然而，到目前为止，在明确的电压范围内进行“面对面”比较所认为的碳纳米管的优越性仍未实现。在这里，我们报告了在玻璃晶圆上排列的基于 CNT (ACNT) 的电子器件，并成功开发了一种 250 nm 栅极长度的基于 ACNT 的场效应晶体管 (FET)，其传输曲线与“90 nm”节点硅几乎相同设备，显示出三到四代的优势。此外，我们的环形振荡器实现了 9.86 ps 的创纪录门延迟，即使在较低的电源电压下也超过了硅。此外，基本逻辑门的制造表明了进一步数字集成电路的潜力。所有这些结果都强调了玻璃晶圆上基于 ACNT 的 FET 作为进一步开发基于 CNT 的电子产品的有效解决方案/平台。