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High-Pressure Synthesis of Semiconducting PbCu3Mn4O12 with Near-Room-Temperature Ferrimagnetic Order
Inorganic Chemistry ( IF 4.6 ) Pub Date : 2024-03-21 , DOI: 10.1021/acs.inorgchem.3c04493
Haoting Zhao, Dabiao Lu, Xiao Wang, Xubin Ye, Jie Zhang, Maocai Pi, Zhao Pan, Yi-Ying Chin, Chien-Te Chen, Zhiwei Hu, Youwen Long

A transition-metal oxide of PbCu3Mn4O12 was prepared at 1523 K and 10 GPa. An A-site-ordered quadruple perovskite structure with the space group Im3̅ is assigned for this compound. Based on bond-valence-sum calculations and X-ray absorption spectroscopy, the charge combination is determined to be PbCu32+Mn44+O12. Due to Cu2+(↑)–Mn4+(↓) antiferromagnetic coupling, a near-room-temperature ferrimagnetic phase transition is observed at approximately 287 K. PbCu3Mn4O12 exhibits a semiconducting electric transport property with the energy band gap Eg ≈ 0.2 eV. In addition, considerable low-field magnetoresistance effects are observed at lower temperatures. This study provides an intrinsic near-room-temperature ferrimagnetic semiconductor that exhibits potential applications in next-generation spintronic devices.

中文翻译:

近室温亚铁磁序半导体 PbCu3Mn4O12 的高压合成

在1523 K和10 GPa下制备了PbCu 3 Mn 4 O 12过渡金属氧化物。该化合物具有空间群Im 3̅的 A 位有序四重钙钛矿结构。基于键价和计算和X射线吸收光谱,确定电荷组合为PbCu 3 2+ Mn 4 4+ O 12。由于 Cu 2+ (↑)–Mn 4+ (↓) 反铁磁耦合,在大约 287 K 时观察到近室温的亚铁磁相变。PbCu 3 Mn 4 O 12在能带上表现出半导体电传输特性能隙E g ≈ 0.2 eV。此外,在较低温度下观察到相当大的低场磁阻效应。这项研究提供了一种本征近室温亚铁磁半导体,在下一代自旋电子器件中具有潜在的应用前景。
更新日期:2024-03-21
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