Five-micron electroluminescence is realized in a planar device using a film of core/shell HgSe/CdS colloidal quantum dots deposited on interdigitated electrodes. The efficiency is comparable to a prior device in a traditional vertical stack, and the fabrication is simplified. Since the emission is from the intraband transition of the HgSe cores, the device is driven by a single-charge carrier type, and this allows identical electrodes of arbitrary design, without additional charge transport layers. Basic studies of the effects of doping and temperature are done with an added bottom gate electrode. The planar structure eliminates the requirement of the infrared transparency of the electrodes. With a back reflector, a dielectric spacer, and optimized electrode spacing and periodicity, a device emitting at 5 μm achieved an external electron-to-photon conversion of 15% and a power conversion efficiency of 0.085%.

中文翻译：

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平面叉指电极上的中红外带内电致发光

使用沉积在叉指电极上的核/壳 HgSe/CdS 胶体量子点薄膜在平面器件中实现五微米电致发光。其效率与传统垂直堆叠中的现有器件相当，并且制造也得到简化。由于发射来自 HgSe 核的带内跃迁，因此该器件由单电荷载流子类型驱动，这允许任意设计的相同电极，而无需额外的电荷传输层。掺杂和温度影响的基础研究是通过添加底栅电极完成的。平面结构消除了对电极的红外透明度的要求。凭借背反射器、介电间隔物以及优化的电极间距和周期，发射波长为 5 μm 的器件实现了 15% 的外部电子到光子转换以及 0.085% 的功率转换效率。