Low-energy compute-in-memory architectures promise to reduce the energy demand for computation and data storage. Wurtzite-type ferroelectrics are promising options for both performance and integration with existing semiconductor processes. The Al_1-xSc_xN alloy is among the few tetrahedral materials that exhibit polarization switching, but the electric field required to switch the polarization is too high (few MV/cm). Going beyond binary compounds, we explore the search space of multinary wurtzite-type compounds. Through this large-scale search, we identify four promising ternary nitrides and oxides, including Mg₂PN₃, MgSiN₂, Li₂SiO₃, and Li₂GeO₃, for future experimental realization and engineering. In $>$$>$90% of the considered multinary materials, we identify unique switching pathways and non-polar structures that are distinct from the commonly assumed switching mechanism in AlN-based materials. Our results disprove the existing design principle based on the reduction of the wurtzite c/a lattice parameter ratio when comparing different chemistries while supporting two emerging design principles—ionicity and bond strength.

低能耗内存计算架构有望减少计算和数据存储的能源需求。纤锌矿型铁电体在性能和与现有半导体工艺的集成方面都是有前途的选择。 Al _{1- x} Sc _x N 合金是少数表现出极化切换的四面体材料之一，但切换极化所需的电场太高（几MV/cm）。除了二元化合物之外，我们还探索多元纤锌矿型化合物的搜索空间。通过大规模的研究，我们确定了四种有前景的三元氮化物和氧化物，包括Mg ₂ PN ₃、MgSiN ₂、Li ₂ SiO ₃和Li ₂ GeO ₃，用于未来的实验实现和工程化。在$>$$>$在所考虑的 90% 多元材料中，我们确定了独特的转换途径和非极性结构，这些结构与 AlN 基材料中通常假设的转换机制不同。我们的结果反驳了在比较不同化学物质时基于纤锌矿c / a晶格参数比降低的现有设计原理，同时支持两个新兴的设计原理——离子性和键合强度。