Adherent bubbles at electrodes are generally treated as reaction penalties. Herein, in situ hydroxylation of indium tin oxide surfaces can be easily achieved by applying a constant potential of +1.0 V in the presence of bubbles. Its successful hydroxylation is further demonstrated by preparing a ferrocene-terminated film, which is confirmed by cyclic voltammetry and X-ray photoelectron spectroscopy.

中文翻译：

---

表面气泡促进氧化铟锡电极的羟基化

电极上附着的气泡通常被视为反应惩罚。在此，通过在气泡存在下施加+1.0V的恒定电势，可以容易地实现氧化铟锡表面的原位羟基化。通过制备二茂铁封端的薄膜进一步证明了其成功的羟基化，并通过循环伏安法和X射线光电子能谱证实了这一点。