In this study, we report on the fabrication of polycrystalline thin film BiSiO, a notable non-perovskite ferroelectric material. The thin films were deposited on Pt-covered Si substrates by pulsed laser deposition (PLD) at room temperature, followed by a post-annealing process in air. The as-deposited thin film was of an amorphous phase of Bi-Si-O, and turned to a polycrystalline phase of BiSiO by the post-annealing above 550°C. The influences of the post-annealing temperature on the phase preference, surface morphology, and dielectric properties of the thin films were investigated by Raman spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and dielectric measurements. As a result, the optimal post-annealing temperature was determined to be 600°C, yielding a good ferroelectric polycrystalline BiSiO thin film with a relative dielectric constant of 143 and a remanent polarization (2) of 7.2 μC cm.

中文翻译：

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脉冲激光沉积结合后退火在 Pt 覆盖的 Si 衬底上制备铁电多晶 Bi2SiO5 薄膜

在这项研究中，我们报告了多晶薄膜 BiSiO 的制造，这是一种著名的非钙钛矿铁电材料。在室温下通过脉冲激光沉积（PLD）将薄膜沉积在 Pt 覆盖的硅基板上，然后在空气中进行后退火处理。沉积后的薄膜为Bi-Si-O非晶相，通过550℃以上的后退火，转变为BiSiO多晶相。通过拉曼光谱、X射线衍射（XRD）、原子力显微镜（AFM）和介电测量研究了后退火温度对薄膜的相偏好、表面形貌和介电性能的影响。结果确定最佳后退火温度为600℃，得到良好的铁电多晶BiSiO薄膜，相对介电常数为143，剩余极化强度（2）为7.2μC·cm。